N-channel power MOSFET, surface mount, TO-263 package. Features 55V drain-source breakdown voltage and 110A continuous drain current. Offers low 13.5mR drain-source resistance. Operates from -55°C to 175°C with a maximum power dissipation of 390W. Includes fast switching times with turn-on delay of 27ns and fall time of 45ns.
PackageTO-263
MountingSurface Mount
PolarityN-CHANNEL
Power390W
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Technical Specifications
Ixys IXTA110N055P technical specifications.
General
Package/Case
TO-263
Continuous Drain Current (ID)
110A
Drain to Source Breakdown Voltage
55V
Drain to Source Resistance
13.5mR
Drain to Source Voltage (Vdss)
55V
Fall Time
45ns
Gate to Source Voltage (Vgs)
20V
Height
4.5mm
Input Capacitance
2.21nF
Length
9.9mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
390W
Mount
Surface Mount
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
390W
Rds On Max
13.5mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PolarHT™
Turn-Off Delay Time
66ns
Turn-On Delay Time
27ns
Width
9.2mm
Compliance
RoHS
Compliant
Datasheet
Ixys IXTA110N055P Datasheet
Download the complete datasheet for Ixys IXTA110N055P to view detailed technical specifications.
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