N-channel power MOSFET, surface mount, TO-263 package. Features 55V drain-source breakdown voltage and 110A continuous drain current. Offers low 13.5mR drain-source resistance. Operates from -55°C to 175°C with a maximum power dissipation of 390W. Includes fast switching times with turn-on delay of 27ns and fall time of 45ns.
PackageTO-263
MountingSurface Mount
PolarityN-CHANNEL
Power390W
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Technical Specifications
Ixys IXTA110N055P technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 110A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 13.5mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.5mm |
| Input Capacitance | 2.21nF |
| Length | 9.9mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 390W |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 390W |
| Rds On Max | 13.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PolarHT™ |
| Turn-Off Delay Time | 66ns |
| Turn-On Delay Time | 27ns |
| Width | 9.2mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTA110N055P Datasheet
Download the complete datasheet for Ixys IXTA110N055P to view detailed technical specifications.
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