
The IXTA110N055T2 is a surface mount N-CHANNEL MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 180W and a continuous drain current of 110A. The device features a drain to source breakdown voltage of 55V and a drain to source resistance of 6.6mR. It is lead free and RoHS compliant, packaged in a TO-263 with 50 units per rail/Tube.
Ixys IXTA110N055T2 technical specifications.
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 110A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 6.6mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 23ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.06nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 180W |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 180W |
| Rds On Max | 6.6mR |
| RoHS Compliant | Yes |
| Series | TrenchT2™ |
| Turn-Off Delay Time | 40ns |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXTA110N055T2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.