
The IXTA120N04T2 is a surface mount N-CHANNEL power MOSFET with a maximum operating temperature range of -55°C to 175°C. It has a continuous drain current rating of 120A and a drain to source breakdown voltage of 40V. The device features a drain to source resistance of 6.1mR and a maximum power dissipation of 200W. It is packaged in a TO-263-3 case and is RoHS compliant.
Ixys IXTA120N04T2 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 6.1mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.24nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 200W |
| Rds On Max | 6.1mR |
| RoHS Compliant | Yes |
| Series | TrenchT2™ |
| Turn-Off Delay Time | 16ns |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXTA120N04T2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
