IXTA130N10T

Power Field-Effect Transistor, 130A I(D), 100V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN

PackageTO-263

MountingSurface Mount

PolarityN-CHANNEL

Power360W

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Ixys IXTA130N10T technical specifications.

Package/Case	TO-263
Continuous Drain Current (ID)	130A
Drain to Source Breakdown Voltage	100V
Drain to Source Resistance	8.5mR
Drain to Source Voltage (Vdss)	100V
Drain-source On Resistance-Max	9.1MR
Fall Time	28ns
Input Capacitance	5.08nF
Lead Free	Lead Free
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	360W
Mount	Surface Mount
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	360W
Rds On Max	9.1mR
RoHS Compliant	Yes
Series	TrenchMV™
Turn-Off Delay Time	44ns

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.