IXTA180N085T

Power Field-Effect Transistor, 180A I(D), 85V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN

PackageTO-263-3

MountingSurface Mount

PolarityN-CHANNEL

Power430W

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Ixys IXTA180N085T technical specifications.

Package/Case	TO-263-3
Continuous Drain Current (ID)	180A
Drain to Source Breakdown Voltage	85V
Drain to Source Resistance	5.5mR
Drain to Source Voltage (Vdss)	85V
Drain-source On Resistance-Max	5.5MR
Fall Time	65ns
Input Capacitance	7.5nF
Lead Free	Lead Free
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	430W
Mount	Surface Mount
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	430W
Rds On Max	5.5mR
RoHS Compliant	Yes
Series	TrenchMV™
Turn-Off Delay Time	55ns

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.