IXYS

IXTA180N10T

Datasheet

Ixys

IXTA180N10T

Name: IXTA180N10T Ixys
Brand: Ixys
SKU: IXTA180N10T

180A 100V N-Channel MOSFET, 6.4mR Rds(on), TO-263

N-Channel Power MOSFET, 100V Drain-Source Voltage, 180A Continuous Drain Current, and 6.4mΩ Drain-Source On-Resistance. Features a maximum power dissipation of 480W and an operating temperature range of -55°C to 175°C. This silicon, metal-oxide semiconductor FET is housed in a TO-263-3 surface-mount package. It offers a fall time of 31ns and a turn-off delay time of 42ns, with an input capacitance of 6.9nF. RoHS compliant and lead-free.

PackageTO-263-3

MountingSurface Mount

PolarityN-CHANNEL

Power480W

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Technical Specifications

Ixys IXTA180N10T technical specifications.

General

Package/Case	TO-263-3
Continuous Drain Current (ID)	180A
Drain to Source Breakdown Voltage	100V
Drain to Source Resistance	6.4mR
Drain to Source Voltage (Vdss)	100V
Drain-source On Resistance-Max	6.4MR
Fall Time	31ns
Input Capacitance	6.9nF
Lead Free	Lead Free
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	480W
Mount	Surface Mount
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	480W
Rds On Max	6.4mR
RoHS Compliant	Yes
Series	TrenchMV™
Turn-Off Delay Time	42ns