IXTA1N100P

Power Field-Effect Transistor, 1A I(D), 1000V, 15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

PackageTO-263-3

MountingSurface Mount

PolarityN-CHANNEL

Power50W

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Ixys IXTA1N100P technical specifications.

Package/Case	TO-263-3
Continuous Drain Current (ID)	1A
Drain to Source Breakdown Voltage	1kV
Drain to Source Resistance	13R
Drain to Source Voltage (Vdss)	1kV
Fall Time	24ns
Gate to Source Voltage (Vgs)	20V
Input Capacitance	331pF
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	50W
Mount	Surface Mount
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	50W
Rds On Max	15R
RoHS Compliant	Yes
Series	Polar™
Turn-Off Delay Time	55ns