IXTA1N120P

Power Field-Effect Transistor, 1A I(D), 1200V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

PackageTO-263-3

MountingSurface Mount

PolarityN-CHANNEL

Power63W

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Ixys IXTA1N120P technical specifications.

Package/Case	TO-263-3
Continuous Drain Current (ID)	1A
Drain to Source Breakdown Voltage	1.2kV
Drain to Source Resistance	20R
Drain to Source Voltage (Vdss)	1.2kV
Fall Time	27ns
Gate to Source Voltage (Vgs)	20V
Input Capacitance	550pF
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	63W
Mount	Surface Mount
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	63W
Rds On Max	20R
RoHS Compliant	Yes
Series	PolarVHV™
Turn-Off Delay Time	54ns