The IXTA1N120P is a surface mount N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 1A and a drain to source breakdown voltage of 1.2kV. The device features a maximum power dissipation of 63W and a gate to source voltage of 20V. It is RoHS compliant and packaged in a TO-263-3 package.
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
Power63W
Quick Jump:
Technical Specifications
Ixys IXTA1N120P technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 1A |
| Drain to Source Breakdown Voltage | 1.2kV |
| Drain to Source Resistance | 20R |
| Drain to Source Voltage (Vdss) | 1.2kV |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 550pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 63W |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 63W |
| Rds On Max | 20R |
| RoHS Compliant | Yes |
| Series | PolarVHV™ |
| Turn-Off Delay Time | 54ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTA1N120P Datasheet
Download the complete datasheet for Ixys IXTA1N120P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
