IXTA1R4N120P

Power Field-Effect Transistor, 1.4A I(D), 1200V, 13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

PackageTO-263-3

MountingSurface Mount

PolarityN-CHANNEL

Power86W

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Ixys IXTA1R4N120P technical specifications.

Package/Case	TO-263-3
Continuous Drain Current (ID)	1.4A
Drain to Source Breakdown Voltage	1.2kV
Drain to Source Resistance	13R
Drain to Source Voltage (Vdss)	1.2kV
Drain-source On Resistance-Max	13R
Fall Time	29ns
Gate to Source Voltage (Vgs)	20V
Input Capacitance	666pF
Lead Free	Lead Free
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	86W
Mount	Surface Mount
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	86W
Rds On Max	13R
RoHS Compliant	Yes
Series	Polar™
Turn-Off Delay Time	78ns