P-Channel Power MOSFET, TO-263 package, featuring 200V drain-source breakdown voltage and 26A continuous drain current. Offers low 170mΩ drain-source resistance (Rds On) and 300W maximum power dissipation. Designed for surface mount applications with a maximum operating temperature of 175°C. Includes fast switching characteristics with a 21ns fall time and 46ns turn-off delay.
PackageTO-263
MountingSurface Mount
PolarityP-CHANNEL
Power300W
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Technical Specifications
Ixys IXTA26P20P technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 26A |
| Drain to Source Breakdown Voltage | -200V |
| Drain to Source Resistance | 170mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.74nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 170mR |
| RoHS Compliant | Yes |
| Series | PolarP™ |
| Turn-Off Delay Time | 46ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTA26P20P Datasheet
Download the complete datasheet for Ixys IXTA26P20P to view detailed technical specifications.
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