IXTA28P065T

Power Field-Effect Transistor, 28A I(D), 65V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN

PackageTO-263-3

MountingSurface Mount

PolarityP-CHANNEL

Power83W

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Ixys IXTA28P065T technical specifications.

Package/Case	TO-263-3
Continuous Drain Current (ID)	28A
Drain to Source Breakdown Voltage	-65V
Drain to Source Resistance	45mR
Drain to Source Voltage (Vdss)	65V
Gate to Source Voltage (Vgs)	15V
Input Capacitance	2.03nF
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	83W
Mount	Surface Mount
Package Quantity	50
Packaging	Rail/Tube
Polarity	P-CHANNEL
Power Dissipation	83W
Rds On Max	45mR
RoHS Compliant	Yes
Series	TrenchP™

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.