Ixys
IXTA2N80
Power Field-Effect Transistor, 2A I(D), 800V, 6.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AA, 3 PIN
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
Power54W
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Technical Specifications
Ixys IXTA2N80 technical specifications.
General
Package/Case
TO-263-3
Continuous Drain Current (ID)
2A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
6.2R
Drain to Source Voltage (Vdss)
800V
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
440pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
54W
Mount
Surface Mount
Package Quantity
1
Packaging
Bulk
Polarity
N-CHANNEL
Power Dissipation
54W
Rds On Max
6.2R
RoHS Compliant
Yes
Turn-Off Delay Time
30ns
Compliance
RoHS
Compliant
Datasheet
Ixys IXTA2N80 Datasheet
Download the complete datasheet for Ixys IXTA2N80 to view detailed technical specifications.
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