The IXTA2N80P is a surface mount N-channel transistor with a maximum operating temperature range of -55°C to 150°C. It features a drain to source breakdown voltage of 800V and a continuous drain current of 2A. The device has a maximum power dissipation of 70W and a drain to source resistance of 6R. It is packaged in a TO-263-3 package and is RoHS compliant.
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
Power70W
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Technical Specifications
Ixys IXTA2N80P technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 6R |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 440pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 70W |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 70W |
| Rds On Max | 6R |
| RoHS Compliant | Yes |
| Series | PolarHV™ |
| Turn-Off Delay Time | 53ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTA2N80P Datasheet
Download the complete datasheet for Ixys IXTA2N80P to view detailed technical specifications.
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