IXTA2R4N120P

Power Field-Effect Transistor, 2.4A I(D), 1200V, 7.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN

PackageTO-263-3

MountingSurface Mount

PolarityN-CHANNEL

Power125W

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Ixys IXTA2R4N120P technical specifications.

Package/Case	TO-263-3
Continuous Drain Current (ID)	2.4A
Drain to Source Breakdown Voltage	1.2kV
Drain to Source Resistance	7.5R
Drain to Source Voltage (Vdss)	1.2kV
Fall Time	32ns
Gate to Source Voltage (Vgs)	20V
Input Capacitance	1.207nF
Lead Free	Lead Free
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	125W
Mount	Surface Mount
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	125W
Rds On Max	7.5R
RoHS Compliant	Yes
Series	Polar™
Turn-Off Delay Time	70ns

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.