The IXTA36P15P-TRL is a P-channel enhancement mode power MOSFET belonging to the PolarP™ series. It is designed using a rugged Polar technology platform which significantly reduces on-state resistance (RDSon) and gate charge (Qg) compared to legacy devices. This avalanche-rated MOSFET is characterized by high power density, fast switching speeds, and a fast intrinsic diode. It is suitable for high-side switching, push-pull amplifiers, DC choppers, and current regulators in automotive and industrial test equipment applications. The suffix TRL indicates that the part is supplied in Tape and Reel packaging with a left-oriented leader.
Temp Range-55 to 150°C
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Technical Specifications
Ixys IXTA36P15P-TRL technical specifications.
General
| Drain-Source Voltage (Vdss) | -150V |
| Continuous Drain Current (Id) | -36A |
| Drain-Source On-State Resistance (Rds(on)) Max | 0.110Ω |
| Power Dissipation (Pd) | 300W |
| Gate-Source Voltage (Vgs) Max | ±20V |
| Gate Threshold Voltage (Vgs(th)) | -2.5 to -4.5V |
| Total Gate Charge (Qg) | 55nC |
| Input Capacitance (Ciss) | 3100pF |
| Reverse Recovery Time (trr) | 228ns |
| Operating Temperature Range | -55 to 150°C |
| Pulsed Drain Current (Idm) | -90A |
| Single Pulse Avalanche Energy (Eas) | 1.5J |
| Thermal Resistance Junction-to-Case (RthJC) | 0.42°C/W |
Compliance
| RoHS | Compliant (RoHS3) |
| REACH | Unaffected |
| Msl | 1 (Unlimited) |
Datasheet
Ixys IXTA36P15P-TRL Datasheet
Download the complete datasheet for Ixys IXTA36P15P-TRL to view detailed technical specifications.
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