N-channel silicon MOSFET for surface mount applications. Features a 1kV drain-to-source voltage and 3A continuous drain current. Offers a low 5.5 ohm Rds On resistance and 125W maximum power dissipation. Operates across a wide temperature range from -55°C to 150°C. Packaged in a TO-263-3 plastic package, this RoHS compliant component is suitable for demanding power applications.
PackageTO-263-3
MountingSurface Mount
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Technical Specifications
Ixys IXTA3N100D2 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Voltage (Vdss) | 1kV |
| Input Capacitance | 1.02nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Surface Mount |
| Packaging | Rail/Tube |
| Rds On Max | 5.5R |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTA3N100D2 Datasheet
Download the complete datasheet for Ixys IXTA3N100D2 to view detailed technical specifications.
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