N-Channel Power MOSFET, 1200V Drain-Source Breakdown Voltage, 3A Continuous Drain Current, and 4.5 Ohm Drain-Source On-Resistance. This silicon Metal-oxide Semiconductor FET features a TO-263 package for surface mounting, a maximum power dissipation of 200W, and operates within a temperature range of -55°C to 150°C. Ideal for high-voltage applications, it offers a 1.35nF input capacitance and fast switching times with an 18ns fall time and 32ns turn-off delay.
PackageTO-263
Current Rating3A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Ixys IXTA3N120 technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 3A |
| Current Rating | 3A |
| Drain to Source Breakdown Voltage | 1.1kV |
| Drain to Source Resistance | 4.5R |
| Drain to Source Voltage (Vdss) | 1.2kV |
| Drain-source On Resistance-Max | 4.5R |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.35nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| Rds On Max | 4.5R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 32ns |
| DC Rated Voltage | 1.2kV |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTA3N120 Datasheet
Download the complete datasheet for Ixys IXTA3N120 to view detailed technical specifications.
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