IXTA44P15T

P-channel power MOSFET, surface mountable in a TO-263-3 package. Features a continuous drain current of 44A and a drain-to-source breakdown voltage of -150V. Offers a low drain-source on-resistance of 65mΩ at a gate-source voltage of 15V. Maximum power dissipation is 298W, with operating temperatures ranging from -55°C to 150°C. This RoHS compliant component is constructed with silicon metal-oxide semiconductor technology.