IXTA4N60P

Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

PackageTO-263-3

Current Rating4A

MountingSurface Mount

PolarityN-CHANNEL

Quick Jump:

Ixys IXTA4N60P technical specifications.

Package/Case	TO-263-3
Continuous Drain Current (ID)	4A
Current Rating	4A
Drain to Source Breakdown Voltage	600V
Drain to Source Resistance	2R
Drain to Source Voltage (Vdss)	600V
Fall Time	20ns
Gate to Source Voltage (Vgs)	30V
Input Capacitance	635pF
Lead Free	Lead Free
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	89W
Mount	Surface Mount
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	89W
Rds On Max	2R
RoHS Compliant	Yes
Series	PolarHV™
Turn-Off Delay Time	50ns
DC Rated Voltage	600V

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.