P-channel MOSFET featuring 100V drain-source breakdown voltage and 52A continuous drain current. This surface-mount device offers a low 50mΩ Rds On and 300W maximum power dissipation. Designed for efficient switching, it exhibits a 22ns fall time and 38ns turn-off delay time. The silicon, metal-oxide semiconductor FET is housed in a TO-263 package, operating from -55°C to 150°C, and is RoHS compliant.
PackageTO-263
MountingSurface Mount
PolarityP-CHANNEL
Power300W
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Technical Specifications
Ixys IXTA52P10P technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 52A |
| Drain to Source Breakdown Voltage | -100V |
| Drain to Source Resistance | 50mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.845nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Surface Mount |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 50mR |
| RoHS Compliant | Yes |
| Series | PolarP™ |
| Turn-Off Delay Time | 38ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTA52P10P Datasheet
Download the complete datasheet for Ixys IXTA52P10P to view detailed technical specifications.
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