N-Channel Power MOSFET, 500V Drain-Source Voltage, 6A Continuous Drain Current, and 500mΩ Maximum Drain-Source On-Resistance. This silicon Metal-Oxide Semiconductor FET features a TO-263-3 package for surface mounting, offering a maximum power dissipation of 300W. With an input capacitance of 2.8nF, it operates across a temperature range of -55°C to 150°C and is lead-free and RoHS compliant.
PackageTO-263-3
MountingSurface Mount
Power300W
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Technical Specifications
Ixys IXTA6N50D2 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 550MR |
| Input Capacitance | 2.8nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 500mR |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTA6N50D2 Datasheet
Download the complete datasheet for Ixys IXTA6N50D2 to view detailed technical specifications.
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