
The IXTA70N085T is a high-power N-channel transistor from Ixys, featuring a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 176W and a continuous drain current of 70A. The transistor is packaged in a TO-263-3 surface mount package and is RoHS compliant. It has a drain to source breakdown voltage of 85V and a drain to source resistance of 13.5mR.
Ixys IXTA70N085T technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 70A |
| Drain to Source Breakdown Voltage | 85V |
| Drain to Source Resistance | 13.5mR |
| Drain to Source Voltage (Vdss) | 85V |
| Fall Time | 40ns |
| Input Capacitance | 2.57nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 176W |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 176W |
| Rds On Max | 13.5mR |
| RoHS Compliant | Yes |
| Series | TrenchMV™ |
| Turn-Off Delay Time | 40ns |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXTA70N085T to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.