IXTA76N075T

Power Field-Effect Transistor, 76A I(D), 75V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN

PackageTO-263-3

MountingSurface Mount

PolarityN-CHANNEL

Power176W

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Ixys IXTA76N075T technical specifications.

Package/Case	TO-263-3
Continuous Drain Current (ID)	76A
Drain to Source Breakdown Voltage	75V
Drain to Source Resistance	12mR
Drain to Source Voltage (Vdss)	75V
Fall Time	33ns
Input Capacitance	2.58nF
Lead Free	Lead Free
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	176W
Mount	Surface Mount
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	176W
Rds On Max	12mR
RoHS Compliant	Yes
Series	TrenchMV™
Turn-Off Delay Time	38ns

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.