IXTA76N25T

Power Field-Effect Transistor, 76A I(D), 250V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN

PackageTO-263-3

MountingSurface Mount

PolarityN-CHANNEL

Power460W

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Ixys IXTA76N25T technical specifications.

Package/Case	TO-263-3
Continuous Drain Current (ID)	76A
Drain to Source Breakdown Voltage	250V
Drain to Source Resistance	39mR
Drain to Source Voltage (Vdss)	250V
Fall Time	29ns
Gate to Source Voltage (Vgs)	30V
Input Capacitance	4.5nF
Lead Free	Lead Free
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	460W
Mount	Surface Mount
Package Quantity	50
Packaging	Bulk
Polarity	N-CHANNEL
Power Dissipation	460W
Rds On Max	39mR
RoHS Compliant	Yes
Turn-Off Delay Time	56ns