P-channel MOSFET, 100V drain-source voltage, 76A continuous drain current, and 25mΩ maximum drain-source on-resistance. Features a 15V gate-source voltage, 13.7nF input capacitance, and 298W maximum power dissipation. This silicon, metal-oxide semiconductor FET is housed in a TO-263-3 surface-mount package and operates between -55°C and 150°C. Lead-free and RoHS compliant.
PackageTO-263-3
MountingSurface Mount
Power298W
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Technical Specifications
Ixys IXTA76P10T technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 76A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 25MR |
| Gate to Source Voltage (Vgs) | 15V |
| Input Capacitance | 13.7nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 298W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 298W |
| Radiation Hardening | No |
| Rds On Max | 25mR |
| RoHS Compliant | Yes |
| Series | TrenchP™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTA76P10T Datasheet
Download the complete datasheet for Ixys IXTA76P10T to view detailed technical specifications.
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