The IXTA7N60PM is a single N-channel enhancement mode power MOSFET with a maximum drain source voltage of 600V and a maximum continuous drain current of 4A. The device has a maximum drain source resistance of 1100 ohms at 10V and a typical gate charge of 20 nanocoulombs at 10V. The MOSFET has a maximum power dissipation of 41000 milliwatts and operates over a temperature range of -55 to 150 degrees Celsius. It is suitable for use in a variety of applications including power supplies and motor control circuits.
Quick Jump:
Technical Specifications
Ixys IXTA7N60PM technical specifications.
General
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 4A |
| Maximum Drain Source Resistance | 1100@10VmOhm |
| Typical Gate Charge @ Vgs | 20@10VnC |
| Typical Gate Charge @ 10V | 20nC |
| Typical Input Capacitance @ Vds | 1180@25VpF |
| Maximum Power Dissipation | 41000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 6D7E2 |
| EU RoHS | Yes |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Ixys IXTA7N60PM Datasheet
Download the complete datasheet for Ixys IXTA7N60PM to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.