IXTA80N10T7

Power Field-Effect Transistor, 80A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, TO-263, 7 PIN

PackageTO-263-7

MountingSurface Mount

PolarityN-CHANNEL

Power230W

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Ixys IXTA80N10T7 technical specifications.

Package/Case	TO-263-7
Continuous Drain Current (ID)	80A
Drain to Source Breakdown Voltage	100V
Drain to Source Resistance	14mR
Drain to Source Voltage (Vdss)	100V
Fall Time	48ns
Input Capacitance	3.04nF
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	230W
Mount	Surface Mount
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	230W
Rds On Max	14mR
RoHS Compliant	Yes
Series	TrenchMV™
Turn-Off Delay Time	40ns

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.