N-Channel Power MOSFET, 500V Vds, 8A continuous drain current, and 0.8 ohm Rds On. This silicon, metal-oxide semiconductor FET features a TO-263 surface mount package, 150W power dissipation, and a maximum operating temperature of 150°C. Ideal for high-voltage applications, it offers a 23ns fall time and 65ns turn-off delay. Lead-free and RoHS compliant.
PackageTO-263
Current Rating8A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Ixys IXTA8N50P technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 8A |
| Current Rating | 8A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 800mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 23ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.05nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| Rds On Max | 800mR |
| RoHS Compliant | Yes |
| Series | PolarHV™ |
| Turn-Off Delay Time | 65ns |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTA8N50P Datasheet
Download the complete datasheet for Ixys IXTA8N50P to view detailed technical specifications.
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