P-channel MOSFET, 85V drain-source breakdown voltage, 96A continuous drain current, and 13mΩ drain-source resistance. Features a 15V gate-source voltage, 13.1nF input capacitance, and 298W maximum power dissipation. Designed for surface mounting in a TO-263-3 package, this silicon metal-oxide semiconductor FET offers a fall time of 22ns and turn-off delay of 45ns. Operates from -55°C to 150°C, is lead-free, and RoHS compliant.
PackageTO-263-3
MountingSurface Mount
PolarityP-CHANNEL
Power298W
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Technical Specifications
Ixys IXTA96P085T technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 96A |
| Drain to Source Breakdown Voltage | -85V |
| Drain to Source Resistance | 13mR |
| Drain to Source Voltage (Vdss) | 85V |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 15V |
| Input Capacitance | 13.1nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 298W |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 298W |
| Rds On Max | 13mR |
| RoHS Compliant | Yes |
| Series | TrenchP™ |
| Turn-Off Delay Time | 45ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTA96P085T Datasheet
Download the complete datasheet for Ixys IXTA96P085T to view detailed technical specifications.
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