N-Channel Power MOSFET featuring a 4.5kV Drain to Source Voltage (Vdss) and 200mA Continuous Drain Current (ID). This Metal-oxide Semiconductor FET offers a low Drain to Source Resistance (Rds On Max) of 750 Ohms. Key switching characteristics include a Fall Time of 143ns and a Turn-Off Delay Time of 28ns, with an Input Capacitance of 256pF. Designed for through-hole mounting, it operates across a temperature range of -55°C to 150°C and has a maximum power dissipation of 78W.
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Ixys IXTF02N450 technical specifications.
General
| Continuous Drain Current (ID) | 200mA |
| Drain to Source Resistance | 750R |
| Drain to Source Voltage (Vdss) | 4.5kV |
| Fall Time | 143ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 256pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 78W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 750R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 28ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTF02N450 Datasheet
Download the complete datasheet for Ixys IXTF02N450 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.