P-channel MOSFET featuring 500V drain-source breakdown voltage and 10A continuous drain current. Offers a maximum on-resistance of 750mΩ and a power dissipation of 300W. Designed for through-hole mounting in a TO-247AD package, this silicon metal-oxide semiconductor FET operates within a temperature range of -55°C to 150°C. Includes a 35ns fall time and 4.7nF input capacitance.
PackageTO-247AD
Current Rating-10A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Ixys IXTH10P50 technical specifications.
General
Package/Case
TO-247AD
Continuous Drain Current (ID)
10A
Current Rating
-10A
Drain to Source Breakdown Voltage
-500V
Drain to Source Resistance
750mR
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
750mR
Fall Time
35ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
4.7nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Through Hole
Number of Elements
1
Package Quantity
30
Packaging
Rail/Tube
Polarity
P-CHANNEL
Power Dissipation
300W
Radiation Hardening
No
Rds On Max
900mR
RoHS Compliant
Yes
Turn-Off Delay Time
35ns
DC Rated Voltage
-500V
Compliance
RoHS
Compliant
Datasheet
Ixys IXTH10P50 Datasheet
Download the complete datasheet for Ixys IXTH10P50 to view detailed technical specifications.
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