P-channel MOSFET featuring 500V drain-source breakdown voltage and 10A continuous drain current. Offers a maximum on-resistance of 750mΩ and a power dissipation of 300W. Designed for through-hole mounting in a TO-247AD package, this silicon metal-oxide semiconductor FET operates within a temperature range of -55°C to 150°C. Includes a 35ns fall time and 4.7nF input capacitance.
PackageTO-247AD
Current Rating-10A
MountingThrough Hole
PolarityP-CHANNEL
Quick Jump:
Technical Specifications
Ixys IXTH10P50 technical specifications.
General
| Package/Case | TO-247AD |
| Continuous Drain Current (ID) | 10A |
| Current Rating | -10A |
| Drain to Source Breakdown Voltage | -500V |
| Drain to Source Resistance | 750mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 750mR |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.7nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 900mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 35ns |
| DC Rated Voltage | -500V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTH10P50 Datasheet
Download the complete datasheet for Ixys IXTH10P50 to view detailed technical specifications.
No datasheet is available for this part.