P-channel power MOSFET featuring 600V drain-source breakdown voltage and 10A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 1-ohm drain-source on-resistance and a maximum power dissipation of 300W. Designed for through-hole mounting in a TO-247AD plastic package, it operates within a temperature range of -55°C to 150°C. Key electrical characteristics include a 4.7nF input capacitance and turn-off delay time of 85ns.
PackageTO-247AD
Current Rating-10A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Ixys IXTH10P60 technical specifications.
General
| Package/Case | TO-247AD |
| Continuous Drain Current (ID) | 10A |
| Current Rating | -10A |
| Drain to Source Breakdown Voltage | -600V |
| Drain to Source Resistance | 1R |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 1R |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.7nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 1R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 85ns |
| DC Rated Voltage | -600V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTH10P60 Datasheet
Download the complete datasheet for Ixys IXTH10P60 to view detailed technical specifications.
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