The IXTH110N10L2 is a 100V power MOSFET from Ixys with a continuous drain current rating of 110A. It features a maximum drain-source on resistance of 18mR and a maximum power dissipation of 600W. The device is packaged in a TO-247-3 package and is designed for through hole mounting. The IXTH110N10L2 is compliant with RoHS regulations and is lead free. It has an input capacitance of 10.5nF and a maximum drain to source voltage of 100V.
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Ixys IXTH110N10L2 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 110A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 18MR |
| Input Capacitance | 10.5nF |
| Lead Free | Lead Free |
| Max Power Dissipation | 600W |
| Mount | Through Hole |
| Packaging | Bulk |
| Rds On Max | 18mR |
| RoHS Compliant | Yes |
| Series | Linear L2™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTH110N10L2 Datasheet
Download the complete datasheet for Ixys IXTH110N10L2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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