P-channel MOSFET, 500V drain-source breakdown voltage, 11A continuous drain current, and 750mΩ maximum drain-source on-resistance. Features a 35ns fall time and 300W maximum power dissipation. This silicon metal-oxide semiconductor FET is designed for through-hole mounting in a TO-247AD package. Operates from -55°C to 150°C and is RoHS compliant.
PackageTO-247AD
Current Rating-11A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Ixys IXTH11P50 technical specifications.
General
| Package/Case | TO-247AD |
| Continuous Drain Current (ID) | 11A |
| Current Rating | -11A |
| Drain to Source Breakdown Voltage | -500V |
| Drain to Source Resistance | 750mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 750MR |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.7nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 750mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 35ns |
| DC Rated Voltage | -500V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTH11P50 Datasheet
Download the complete datasheet for Ixys IXTH11P50 to view detailed technical specifications.
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