
The IXTH120P065T is a P-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 120A and a drain to source breakdown voltage of -65V. The device features a drain to source resistance of 10mR and a maximum power dissipation of 298W. It is packaged in a TO-247-3 plastic package and is RoHS compliant.
Ixys IXTH120P065T technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Breakdown Voltage | -65V |
| Drain to Source Resistance | 10mR |
| Drain to Source Voltage (Vdss) | 65V |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 15V |
| Input Capacitance | 13.2nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 298W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 298W |
| Rds On Max | 10mR |
| RoHS Compliant | Yes |
| Series | TrenchP™ |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXTH120P065T to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
