N-Channel Power MOSFET featuring 500V drain-source voltage and 15A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 480mΩ Rds On at a nominal 2.5V gate-source voltage. Designed for through-hole mounting in a TO-247 plastic package, it boasts a maximum power dissipation of 300W and operates across a wide temperature range from -55°C to 150°C. Input capacitance is 4.08nF.
PackageTO-247
MountingThrough Hole
Power300W
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Technical Specifications
Ixys IXTH15N50L2 technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Voltage (Vdss) | 500V |
| Input Capacitance | 4.08nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Nominal Vgs | 2.5V |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 300W |
| Rds On Max | 480mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | Linear L2™ |
| Threshold Voltage | 2.5V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTH15N50L2 Datasheet
Download the complete datasheet for Ixys IXTH15N50L2 to view detailed technical specifications.
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