IXTH16P20

Power Field-Effect Transistor, 16A I(D), 200V, 0.16ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN

PackageTO-247-3

MountingThrough Hole

PolarityP-CHANNEL

Power300W

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Ixys IXTH16P20 technical specifications.

Package/Case	TO-247-3
Continuous Drain Current (ID)	16A
Drain to Source Breakdown Voltage	-200V
Drain to Source Resistance	160mR
Drain to Source Voltage (Vdss)	200V
Fall Time	25ns
Gate to Source Voltage (Vgs)	20V
Input Capacitance	2.8nF
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	300W
Mount	Through Hole
Package Quantity	30
Packaging	Rail/Tube
Polarity	P-CHANNEL
Power Dissipation	300W
Rds On Max	160mR
RoHS Compliant	Yes
Turn-Off Delay Time	65ns

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.