The IXTH16P20 is a P-channel MOSFET with a drain to source breakdown voltage of -200V and a continuous drain current of 16A. It features a drain to source resistance of 160mR and a gate to source voltage of 20V. The device is packaged in a TO-247-3 package and is designed for through hole mounting. The IXTH16P20 operates over a temperature range of -55°C to 150°C and is RoHS compliant.
PackageTO-247-3
MountingThrough Hole
PolarityP-CHANNEL
Power300W
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Technical Specifications
Ixys IXTH16P20 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Breakdown Voltage | -200V |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.8nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 160mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 65ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTH16P20 Datasheet
Download the complete datasheet for Ixys IXTH16P20 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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