IXTH200N10T

N-Channel MOSFET, 200A, 100V, 5.5mR Rds(on), TO-247

N-channel silicon MOSFET featuring 100V drain-source breakdown voltage and 200A continuous drain current. This power field-effect transistor offers a low 5.5mΩ drain-source on-resistance, enabling efficient power switching. Designed for through-hole mounting in a TO-247 package, it operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 550W. Key electrical characteristics include a 9.4nF input capacitance and turn-off delay time of 45ns.

PackageTO-247-3

MountingThrough Hole

PolarityN-CHANNEL

Power550W

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Technical Specifications

Ixys IXTH200N10T technical specifications.

General

Package/Case	TO-247-3
Continuous Drain Current (ID)	200A
Drain to Source Breakdown Voltage	100V
Drain to Source Resistance	5.5mR
Drain to Source Voltage (Vdss)	100V
Drain-source On Resistance-Max	5.5MR
Fall Time	34ns
Input Capacitance	9.4nF
Lead Free	Lead Free
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	550W
Mount	Through Hole
Package Quantity	30
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	550W
Rds On Max	5.5mR
RoHS Compliant	Yes
Series	TrenchMV™
Turn-Off Delay Time	45ns