The IXTH22N50P is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a continuous drain current of 22A and a drain to source breakdown voltage of 500V. The device has a drain to source resistance of 270mR and a gate to source voltage of 30V. It is packaged in a TO-247-3 package and is lead-free and RoHS compliant.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power350W
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Technical Specifications
Ixys IXTH22N50P technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 22A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 270mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 2.63nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 350W |
| Rds On Max | 270mR |
| RoHS Compliant | Yes |
| Series | PolarHV™ |
| Turn-Off Delay Time | 75ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTH22N50P Datasheet
Download the complete datasheet for Ixys IXTH22N50P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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