The IXTH24N50L is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a drain to source breakdown voltage of 500V and a continuous drain current of 24A. The device has a maximum power dissipation of 400W and is packaged in a TO-247-3 plastic package. It is lead-free and RoHS compliant.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power400W
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Technical Specifications
Ixys IXTH24N50L technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 24A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 300mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 230mR |
| Fall Time | 75ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 2.5nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 400W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 400W |
| Rds On Max | 300mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 110ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTH24N50L Datasheet
Download the complete datasheet for Ixys IXTH24N50L to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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