N-Channel Power MOSFET, 600V Drain-Source Voltage, 26A Continuous Drain Current, and 270mΩ Max Drain-Source On-Resistance. Features include a 460W Max Power Dissipation, 21ns Fall Time, and 75ns Turn-Off Delay Time. This silicon Metal-oxide Semiconductor FET is housed in a TO-247AD package for through-hole mounting. Operating temperature range is -55°C to 150°C, with RoHS compliance and lead-free construction.
PackageTO-247AD
Current Rating26A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXTH26N60P technical specifications.
General
| Package/Case | TO-247AD |
| Continuous Drain Current (ID) | 26A |
| Current Rating | 26A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 270mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 270MR |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 4.15nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 460W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 460W |
| Radiation Hardening | No |
| Rds On Max | 270mR |
| RoHS Compliant | Yes |
| Series | PolarHV™ |
| Turn-Off Delay Time | 75ns |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTH26N60P Datasheet
Download the complete datasheet for Ixys IXTH26N60P to view detailed technical specifications.
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