N-Channel Power MOSFET, 500V Drain to Source Breakdown Voltage, 30A Continuous Drain Current, and 200mΩ Drain to Source Resistance. Features a 400W maximum power dissipation and a TO-247 package for through-hole mounting. Operates within a temperature range of -55°C to 150°C, with a nominal gate-source voltage of 2.5V. Includes a 40ns fall time and 94ns turn-off delay time.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power400W
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Technical Specifications
Ixys IXTH30N50L2 technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 200mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 8.1nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 400W |
| Mount | Through Hole |
| Nominal Vgs | 2.5V |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 400W |
| Rds On Max | 200mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | Linear L2™ |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 94ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTH30N50L2 Datasheet
Download the complete datasheet for Ixys IXTH30N50L2 to view detailed technical specifications.
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