N-Channel Power MOSFET featuring 600V Drain to Source Breakdown Voltage and 30A Continuous Drain Current. This silicon Metal-oxide Semiconductor FET offers a low 240mΩ Drain to Source Resistance (Rds On Max) and a maximum power dissipation of 540W. Designed for through-hole mounting in a TO-247 plastic package, it operates across a wide temperature range from -55°C to 150°C. Key electrical characteristics include 10.7nF input capacitance and a nominal gate-source threshold voltage of 2.5V.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power540W
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Technical Specifications
Ixys IXTH30N60L2 technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 240mR |
| Drain to Source Voltage (Vdss) | 600V |
| Input Capacitance | 10.7nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 540W |
| Mount | Through Hole |
| Nominal Vgs | 2.5V |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 540W |
| Rds On Max | 240mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | Linear L2™ |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 123ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTH30N60L2 Datasheet
Download the complete datasheet for Ixys IXTH30N60L2 to view detailed technical specifications.
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