N-Channel Power MOSFET, 500V Drain-Source Voltage, 36A Continuous Drain Current, and 170mΩ Max Drain-Source On-Resistance. Features a 540W Max Power Dissipation and operates within a -55°C to 150°C temperature range. This silicon Metal-oxide Semiconductor FET is housed in a TO-247AD package for through-hole mounting. Includes 5.5nF input capacitance and 21ns fall time.
PackageTO-247AD
Current Rating36A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXTH36N50P technical specifications.
General
| Package/Case | TO-247AD |
| Continuous Drain Current (ID) | 36A |
| Current Rating | 36A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 170mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 170MR |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 5.5nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 540W |
| Mount | Through Hole |
| Nominal Vgs | 5V |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 540W |
| Rds On Max | 170mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PolarHV™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 75ns |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTH36N50P Datasheet
Download the complete datasheet for Ixys IXTH36N50P to view detailed technical specifications.
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