Ixys
IXTH36P10
Power Field-Effect Transistor, 36A I(D), 100V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD,
PackageTO-247-3
MountingThrough Hole
PolarityP-CHANNEL
Power180W
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Technical Specifications
Ixys IXTH36P10 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 36A |
| Drain to Source Breakdown Voltage | -100V |
| Drain to Source Resistance | 75mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.8nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 180W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 180W |
| Rds On Max | 75mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 65ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTH36P10 Datasheet
Download the complete datasheet for Ixys IXTH36P10 to view detailed technical specifications.
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