The IXTH36P10 is a P-channel MOSFET with a continuous drain current of 36A and a drain to source breakdown voltage of -100V. It has a drain to source resistance of 75mR and a maximum operating temperature range of -55°C to 150°C. The device is packaged in a TO-247-3 package and is RoHS compliant. It is suitable for high-power applications and can dissipate up to 180W of power.
PackageTO-247-3
MountingThrough Hole
PolarityP-CHANNEL
Power180W
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Technical Specifications
Ixys IXTH36P10 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 36A |
| Drain to Source Breakdown Voltage | -100V |
| Drain to Source Resistance | 75mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.8nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 180W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 180W |
| Rds On Max | 75mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 65ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTH36P10 Datasheet
Download the complete datasheet for Ixys IXTH36P10 to view detailed technical specifications.
No datasheet is available for this part.