P-channel power MOSFET featuring 200V drain-source voltage and 48A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 85mΩ Rds On (Max) and a maximum power dissipation of 462W. Designed for through-hole mounting in a TO-247-3 package, it operates from -55°C to 150°C. Input capacitance is 5.4nF. This component is lead-free, RoHS compliant, and comes in a rail/tube package.
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Ixys IXTH48P20P technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 48A |
| Drain to Source Voltage (Vdss) | 200V |
| Input Capacitance | 5.4nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 462W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Rds On Max | 85mR |
| RoHS Compliant | Yes |
| Series | PolarP™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTH48P20P Datasheet
Download the complete datasheet for Ixys IXTH48P20P to view detailed technical specifications.
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