P-channel power MOSFET with 85V drain-source breakdown voltage and 50A continuous drain current. Features 55mΩ maximum drain-source on-resistance and 300W maximum power dissipation. Operates from -55°C to 150°C, with a gate-source voltage rating of 20V. Packaged in TO-247AD for through-hole mounting, this RoHS compliant component offers 38ns fall time and 86ns turn-off delay.
PackageTO-247AD
Current Rating-50A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Ixys IXTH50P085 technical specifications.
General
Package/Case
TO-247AD
Continuous Drain Current (ID)
50A
Current Rating
-50A
Drain to Source Breakdown Voltage
-85V
Drain to Source Resistance
55mR
Drain to Source Voltage (Vdss)
85V
Drain-source On Resistance-Max
55MR
Fall Time
38ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
4.2nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Through Hole
Number of Elements
1
Package Quantity
130
Packaging
Rail/Tube
Polarity
P-CHANNEL
Power Dissipation
300W
Radiation Hardening
No
Rds On Max
55mR
RoHS Compliant
Yes
Turn-Off Delay Time
86ns
DC Rated Voltage
-85V
Compliance
RoHS
Compliant
Datasheet
Ixys IXTH50P085 Datasheet
Download the complete datasheet for Ixys IXTH50P085 to view detailed technical specifications.
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