P-channel power MOSFET with 85V drain-source breakdown voltage and 50A continuous drain current. Features 55mΩ maximum drain-source on-resistance and 300W maximum power dissipation. Operates from -55°C to 150°C, with a gate-source voltage rating of 20V. Packaged in TO-247AD for through-hole mounting, this RoHS compliant component offers 38ns fall time and 86ns turn-off delay.
PackageTO-247AD
Current Rating-50A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Ixys IXTH50P085 technical specifications.
General
| Package/Case | TO-247AD |
| Continuous Drain Current (ID) | 50A |
| Current Rating | -50A |
| Drain to Source Breakdown Voltage | -85V |
| Drain to Source Resistance | 55mR |
| Drain to Source Voltage (Vdss) | 85V |
| Drain-source On Resistance-Max | 55MR |
| Fall Time | 38ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.2nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 130 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 55mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 86ns |
| DC Rated Voltage | -85V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTH50P085 Datasheet
Download the complete datasheet for Ixys IXTH50P085 to view detailed technical specifications.
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