P-Channel MOSFET, 100V drain-source voltage, 76A continuous drain current, and 25mΩ Rds On. This single-element silicon Metal-Oxide-Semiconductor FET features a TO-247 plastic package for through-hole mounting. It offers a maximum power dissipation of 298W and operates within a temperature range of -55°C to 150°C. Input capacitance is 13.7nF, with a gate-source voltage rating of 15V.
PackageTO-247
MountingThrough Hole
Power298W
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Technical Specifications
Ixys IXTH76P10T technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 76A |
| Drain to Source Voltage (Vdss) | 100V |
| Gate to Source Voltage (Vgs) | 15V |
| Input Capacitance | 13.7nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 298W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 298W |
| Radiation Hardening | No |
| Rds On Max | 25mR |
| RoHS Compliant | Yes |
| Series | TrenchP™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTH76P10T Datasheet
Download the complete datasheet for Ixys IXTH76P10T to view detailed technical specifications.
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