Ixys
IXTH7P50
Power Field-Effect Transistor, 7A I(D), 500V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN
PackageTO-247-3
Current Rating-7A
MountingThrough Hole
PolarityP-CHANNEL
Quick Jump:
Technical Specifications
Ixys IXTH7P50 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 7A |
| Current Rating | -7A |
| Drain to Source Breakdown Voltage | -500V |
| Drain to Source Resistance | 1.5R |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 1.5R |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.4nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 180W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 180W |
| Rds On Max | 1.5R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 35ns |
| DC Rated Voltage | -500V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTH7P50 Datasheet
Download the complete datasheet for Ixys IXTH7P50 to view detailed technical specifications.
No datasheet is available for this part.