P-channel MOSFET, 100V drain-source breakdown voltage, 170A continuous drain current, and 12mΩ drain-source resistance. Features a 20V gate-source voltage, 12.6nF input capacitance, and 890W maximum power dissipation. Packaged in a TO-264-3 through-hole mount, this RoHS compliant silicon metal-oxide semiconductor FET operates from -55°C to 150°C.
PackageTO-264-3
MountingThrough Hole
PolarityP-CHANNEL
Power890W
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Technical Specifications
Ixys IXTK170P10P technical specifications.
General
| Package/Case | TO-264-3 |
| Continuous Drain Current (ID) | 170A |
| Drain to Source Breakdown Voltage | -100V |
| Drain to Source Resistance | 12mR |
| Drain to Source Voltage (Vdss) | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 12.6nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 890W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 890W |
| Rds On Max | 12mR |
| RoHS Compliant | Yes |
| Series | PolarP™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTK170P10P Datasheet
Download the complete datasheet for Ixys IXTK170P10P to view detailed technical specifications.
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